李成明
姓名:李成明
所在系所:功能材料研究所
职称:教授
通信地址:北京科技大学新材料技术研究院
邮编:100083
办公地点:金物楼204
办公电话:010-62332390,13501242523
邮箱:chengmli@mater.ustb.edu.cn
个人简介
研究方向
科研业绩
代表性论文
1. Yabo Huang, Xiaohua Zhu, Shuqin Cao, Liangxian Chen, Siwu Shao, Kang An, Yuting Zheng, Jinlong Liu, Junjun Wei, Chengming Li. Microstructure and properties of La-doped Er2O3 anti-reflection films on CVD diamond. Applied Surface Science, 2022,602(15):154229.
2. Juping Tu,Jinlong Liu,Lei Yao,Guang Mo,Liangxian Chen,Junjun Wei,Chengming Li. Small-angle X-ray scattering performances of single crystal and polycrystalline diamond windows in a heated environment. Jounal of Materials Science.2022,57: 12824-12835.
3. 邵思武,郑宇亭,安康,黄亚博,陈良贤,刘金龙,魏俊俊,李成明. 偏压技术在金刚石薄膜制备中应用的进展材料研究学报.2022, 36 (3): 161-174.
4 Yuting Zheng, Aude E.L. Cumont, Mingjie Bai, Yifan Liang, Jinlong Liu, Junjun Wei, Xiaotong Zhang, Haitao Ye, Chengming Li, Smoothing of single crystal diamond by high-speed three-dimensional dynamic friction polishing: Optimization and surface bonds evolution mechanism, International Journal of Refractory Metals and Hard Materials,2021, 96(4), 105472
5. Zheng Yuting, Ye Haitao*, Thornton Rob, Knott Tom, Ochalski J. Tomasz, Wang Jue, Liu Jinlong, Wei Junjun, Chen Liangxian, Cumont Aude, Zhang Ruoying, Li Chengming*. Subsurface cleavage of diamond after high-speed three-dimensional dynamic friction polishing. Diamond and Related Materials. 2020, 101(1): 107600.
6. Zheng Yuting, Liu Jinlong, Zhang Ruoying, Cumont Aude, Wang Jue, Wei Junjun, Li Chengming*, Ye Haitao*. Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching. Journal of Materials Research. 2020, 35: 462-472.
7. Zheng Yuting, Zhang Rui, Chen Xiaodong, Hing Peter, Liu Jinlong, Wei Junjun, Wang Jue, Li Chengming*, Ye Haitao*. Doomed couple of diamond with terahertz frequency: hyperfine quality discrimination and complex dielectric responses of diamond in terahertz waveband. ACS Applied Electronic Materials, 2020, 2(5): 1459–1469
8. XiaoluYuan, JiangweiLiu*, SiwuShao, JinlongLiu, JunjunWei, BoDa, Chengming Li*, YasuoKoide. Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond,AIP Advances, 2020, 10(5): 055114.
9. Zi Hao Guo, Yu Cui Jiao, Hai Lu Wang, Chen Zhang, Fei Liang, Jin Long Liu, Hai Dong Yu,* Cheng Ming Li,* Guang Zhu,* and Zhong Lin Wang*, Self-Powered Electrowetting Valve for Instantaneous and Simultaneous Actuation of Paper-Based Microfluidic Assays, Advanced Functional Materials, 2019, 1808974(1-7).
10. Zheng Yuting, Liu Jinlong, Wang Jingjing, Li Zhengcheng, HaoHui, Wei Junjun, Chen Liangxian, Ye Haitao, Li Chengming*. The direct-current characteristics and surface repairing of a hydrogen terminated free-standing polycrystalline diamond in aqueous solutions. Journal of Physics and Chemistry of Solids. 2019, 130(7):111-119.
11. Zheng Yuting, Ye Haitao, Liu Jinlong, Wei Junjun, Chen Liangxian, Li Chengming*. Surface morphology evolution of a polycrystalline diamond by inductively coupled plasma reactive ion etching (ICP-RIE). Materials Letters. 2019, 253(10): 276–280.
12. XiaoluYuan, YutingZheng, XiaohuaZhu, JinlongLiu, JiangweiLiu, Chengming Li*, Peng Jin*, Zhanguo Wang. Recent progress in diamond-based MOSFETs. International Journal of Minerals, Metallurgy, and Materials, 2019, 26(10): 1195-1205.
13. Zhao, Y, Li, CM*, Liu, JL, An, K, Yan, XB, Hei, LF, Chen, LX, Wei, JJ, Lu, FX, The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth, Materials, 2019, 12: 2492(1-12).
14. 李成明*, 陈良贤, 刘金龙, 魏俊俊, 黑立富, 吕反修. 直流电弧等离子体喷射法制备金刚石自支撑膜研究新进展. 金刚石与磨料磨具工程, 2018, 38(1): 16-26.
15. Yun Zhao,Yanzhao Guo, Liangzhen Lin, YuntingZheng, LifuHei, Jinlong Liu, Junjun Wei, Liangxian Chen,Chengming Li*. Relationship between Birefringence and Surface Morphology in Single-Crystal Diamonds Grown by MPCVD.Crystal Research and Technology, 2018, 53(7): 1800055.
16. Yun Zhao, Yan zhao Guo, Liangzhen Lin, Yuting Zheng, Lifu Hei, Jinlong Liu, Junjun Wei, Liangxian Chen,Chengming Li*. Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD. Journal of Crystal Growth, 2018, 491(6): 89-96.
17. Kang An,Liangxian Chen, Xiongbo Yan, Xin Jia, Jinlong Liu, Junjun Wei, Yuefei Zhang, Fanxiu Lu, Chengming Li*. Fracture strength and toughness of chemical-vapor-deposited polycrystalline diamond films. Ceramics International, 2018, 15(10): 17845-17851.
18. Kang An, Liangxian Chen, Xiongbo Yan, Xin Jia, Yun Zhao, Yuting Zheng, Jinlong Liu, Junjun Wei, Fanxiu Lu, Chengming Li*. Fracture behavior of diamond films deposited by DC arc plasma jet CVD. Ceramics International, 2018, 44(8): 13402-13408.
申请专利
1、李成明,郑宇亭,刘金龙,魏俊俊,陈良贤,一种通过离子注入制备金刚石氮镍复合色心的方法,201911033263.1,2019-10-28,发明专利,申请。
2、李成明,原晓芦,郑宇亭,黄亚博,刘金龙,魏俊俊,陈良贤,一种降低氢终端金刚石欧姆接触电阻的方法,201910590637.3,2019-07-02,发明专利,申请。
3、李成明,原晓芦,郑宇亭,黄亚博,刘金龙,魏俊俊,陈良贤,一种低阻氢终端金刚石欧姆接触电极,201921018266.3,2019-07-02,实用新型,申请。
4、李成明,刘金龙,朱肖华,邵思武,赵云,屠菊萍,陈良贤,魏俊俊,张建军,一种垂直拼接制备大尺寸CVD金刚石及切割方法,201910560201.X,2019-06-26,发明专利,申请。
5、李成明,黄亚博,陈良贤,刘金龙,魏俊俊,张建军,一种xxx的装置及沉积方法,201918000847.3,2019-03-15,发明专利,申请。
6、李成明,原晓芦,魏俊俊,刘金龙,陈良贤,一种气体传感器微热板,ZL201920113696.7,2019-01-23,实用新型,授权,公告日:2019-10-18。
7、李成明,赵云,陈良贤,刘金龙,魏俊俊,郭艳召,安康,闫雄伯,贾鑫,一种用于锡圆环片成型的模具,ZL201821698191.3,2018-10-19,实用新型,授权,公告日:2019-07-16。
8、李成明,安康,陈良贤,贾鑫,魏俊俊,张建军,刘金龙,一种制备高质量金刚石的气体循环系统及其使用方法,201811146959.0,2018-09-29,发明专利,申请。
9、李成明,贾鑫,魏俊俊,刘金龙,陈良贤,一种制备金刚石基衬底氮化镓晶体管的方法,201811089355.7,2018-09-18,发明专利,申请。
10、李成明,赵云,刘金龙,郑宇亭,陈良贤,魏俊俊,一种提高CVD单晶金刚石硬度及韧性的方法,201810556015.4,2018-06-01,发明专利,申请。
11、李成明,郑宇亭,刘金龙,赵云,郭艳召,魏俊俊,陈良贤,不间断动态原位合成单晶与超纳米金刚石复合结构的方法,ZL201810307871.6,2018-04-08,发明专利,授权,公告日:2019-12-17。
12、李成明,郑宇亭,刘金龙,魏俊俊,黑立富,陈良贤,生物应用的羟基终端纳米金刚石的高效终端化制备方法,ZL201711084169.X,2017-11-07,发明专利,授权,公告日:2019-08-27。
13、李成明,郑宇亭,刘金龙,赵云,郭艳召,魏俊俊,黑立富,陈亮贤,一种用于离子传感器的氢终端金刚石表面电化学修复方法,ZL201710861985.0,2017-09-20,发明专利,授权,公告日:2019-11-12。
14、李成明,贾鑫,魏俊俊,陈良贤,安康,郑宇亭,黑立富,刘金龙,一种基于非自支撑GaN对粘制备金刚石基GaN的方法,ZL201710491945.1,2017-06-26,发明专利,授权,公告日:2019-07-09。
15、李成明,赵云,林亮珍,安康,郑宇亭,黑立富,刘金龙,魏俊俊,陈良贤,微波等离子体化学气相沉积法生长单晶金刚石用的沉积台,ZL201720707933.3,2017-06-01,实用新型,授权,公告日:2018-01-02。
16、李成明,郑宇亭,林亮珍,赵云,刘金龙,魏俊俊,陈良贤,黑立富,单晶金刚石表面原位n型半导体化全碳结构的制备方法,ZL201710363710.4,2017-05-22,发明专利,授权,公告日:2019-08-27。